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BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω ...
DESCRIPTION
The BSS123 is a high-performance N-channel enhancement mode MOSFET from ON Semiconductor, designed for a wide range of applications requiring efficient and reliable switching. Packaged in a compact SOT-23 form factor, this MOSFET offers a drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 0.17A, making it ideal for use in low-power circuits and switching applications. With an on-resistance (R_DS(on)) of just 6ohm (at V_GS = 10V), it ensures minimal power loss and excellent thermal performance, enhancing overall system efficiency.This device is suitable for use in various applications such as load switches, LED drivers, and small DC-DC converters. The BSS123 is engineered to operate reliably in environments that demand high-speed switching with low gate charge, ensuring quick response times and reduced power consumption. Built with robust protection against overvoltage and capable of handling significant power dissipation, the BSS123 is a versatile and dependable choice for your transistor switching needs. Optimize your designs with this highly efficient and durable MOSFET, backed by ON Semiconductor's reputation for quality and innovation in semiconductor technology.
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SPÉCIFICATIONS
EN STOCK: 150 000
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DÉLAI DE L'USINE 48 Semaines
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