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FDB3632 by onsemi

FDB3632

onsemi

The FDB3632 is an N-Channel PowerTrench® MOSFET rated for 100 V drain-to-source voltage, 80 A continuous drain current, and 9 mΩ maximum on-resistance. ...

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DESCRIPTION

The FDB3632 is a 100 V N-Channel PowerTrench® MOSFET designed for high-power switching applications. It features a low on-resistance of 7.5 mΩ (typical) at a 10V gate voltage and a total gate charge of 84 nC, enabling efficient operation. This device also offers a low Miller charge, a low Qrr body diode, and is capable of withstanding Unclamped Inductive Switching (UIS) pulses. Its characteristics make it well-suited for applications such as synchronous rectification, motor drives, uninterruptible power supplies, and micro solar inverters.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FDB3632
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
US
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
800

EN STOCK: 4,000

Peut être expédié immédiatement

Commande min Quantitè: 25

DÉLAI DE L'USINE 18 Weeks

PRICE (USD)

QTÉ
Prix unitaire
25
$2.66
100
$1.97
250
$1.95
800
$1.93
1 600
$1.92
3 200
$1.91
5 600
$1.90
8 000 +
$1.88
Emballage standard du fournisseur
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