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FDMS86200 by onsemi

FDMS86200

onsemi

The FDMS86200 is a 150V N-Channel PowerTrench® MOSFET featuring Shielded Gate technology for high-efficiency applications. ...

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DESCRIPTION

The FDMS86200 is an N-Channel MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device is optimized for low on-state resistance and superior switching performance, featuring a maximum rDS(on) of 18 mΩ at a gate-source voltage of 10V. It has a maximum drain-to-source voltage rating of 150V and can handle a continuous drain current of up to 35A at a case temperature of 25°C. The combination of an advanced package and silicon results in high efficiency, making it well-suited for DC-DC conversion applications.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FDMS86200
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

EN STOCK: 10,340

Peut être expédié immédiatement

Commande min Quantitè: 25

DÉLAI DE L'USINE 30 Weeks

PRICE (USD)

QTÉ
Prix unitaire
25
$1.839
250
$1.188
500
$1.025
1 000
$0.972
3 000
$0.970
6 000
$0.968
9 000
$0.965
12 000 +
$0.963
Emballage standard du fournisseur
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