FDT86113LZ
The FDT86113LZ is an N-Channel PowerTrench® MOSFET rated for 100V drain-to-source voltage and 3.3A continuous drain current. ...
DESCRIPTION
The FDT86113LZ is an N-Channel logic-level MOSFET produced using an advanced PowerTrench® process to minimize on-state resistance while maintaining superior switching performance. This device features a maximum on-resistance (rDS(on)) of 100 mΩ at a VGS of 10V and is rated for a drain-to-source voltage of 100V with a continuous drain current of 3.3A. It incorporates a Gate-to-Source zener diode for enhanced ESD protection and is 100% UIL tested. Housed in a surface-mount SOT-223 package, this MOSFET is optimized for high power and current handling, making it ideal for DC-DC switching applications.
Mots-clés de recherche: FDT86113LZ
SPÉCIFICATIONS
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