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FDV303N
The FDV303N is an N-Channel enhancement mode digital FET designed for low voltage and battery-powered applications. ...
DESCRIPTION
The FDV303N is an N-Channel enhancement mode field-effect transistor produced using a high cell density DMOS process to minimize on-state resistance at low gate drive conditions. It features a drain-source voltage of 25V and a continuous drain current of 0.68A. The device exhibits a low on-state resistance (RDS(ON)) of 0.45 Ω at a 4.5V gate voltage and has a gate threshold voltage below 1V, allowing direct operation in 3V circuits. Due to its low gate drive requirements and high efficiency, it is ideal for applications in battery circuits, inverters, and miniature DC/DC converters in portable electronics like cellular phones.
Mots-clés de recherche: FDV303N
SPÉCIFICATIONS
EN STOCK: 165 000
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DÉLAI DE L'USINE 18 Semaines
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