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FDV303N by onsemi

FDV303N

onsemi

The FDV303N is an N-Channel enhancement mode digital FET designed for low voltage and battery-powered applications. ...

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RoHS Compliant
Emballage
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DESCRIPTION

The FDV303N is an N-Channel enhancement mode field-effect transistor produced using a high cell density DMOS process to minimize on-state resistance at low gate drive conditions. It features a drain-source voltage of 25V and a continuous drain current of 0.68A. The device exhibits a low on-state resistance (RDS(ON)) of 0.45 Ω at a 4.5V gate voltage and has a gate threshold voltage below 1V, allowing direct operation in 3V circuits. Due to its low gate drive requirements and high efficiency, it is ideal for applications in battery circuits, inverters, and miniature DC/DC converters in portable electronics like cellular phones.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FDV303N
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

EN STOCK: 165,000

Peut être expédié immédiatement

Commande min Quantitè: 3000

Multiple: 3000

DÉLAI DE L'USINE 12 Weeks

PRICE (USD)

QTÉ
Prix unitaire
3 000
$0.0368
6 000
$0.0353
12 000
$0.0348
27 000
$0.0339
51 000
$0.0327
102 000
$0.0318
150 000
$0.0317
252 000 +
$0.0314
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