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FGH60N60SMD by onsemi

FGH60N60SMD

onsemi

The FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. ...

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DESCRIPTION

The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FGH60N60SMD
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
30

EN STOCK: 2,220

Peut être expédié immédiatement

Commande min Quantitè: 30

Multiple: 30

DÉLAI DE L'USINE 13 Weeks

PRICE (USD)

QTÉ
Prix unitaire
30
$4.25
60
$4.24
120
$3.52
270
$3.49
510
$3.00
1 020
$2.99
2 520
$2.98
5 010 +
$2.97
Emballage standard du fournisseur
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