FQB12P20TM
The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...
DESCRIPTION
The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.
Mots-clés de recherche: FQB12P20TM
SPÉCIFICATIONS
EN STOCK: 1 890
Expédition today, Saisissez la valeur du paramètre.
Quantité minimale de commande: 25
DÉLAI DE L'USINE 11 Semaines
Prix (USD)
ressources
English
Français
