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FQPF9N90CT by onsemi

FQPF9N90CT

onsemi

The FQPF9N90CT is an N-Channel QFET® MOSFET rated for 900V, 8.0A, with a maximum on-state resistance of 1.4Ω. ...

Fiche technique
Non-Compliant
Emballage
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DESCRIPTION

The FQPF9N90CT is an N-Channel enhancement mode power MOSFET developed using proprietary planar stripe and DMOS technology. It features a high drain-source voltage of 900V, a continuous drain current of 8.0A at 25°C, and a gate-source voltage rating of ±30V. This device is characterized by a low on-state resistance of 1.4Ω (max) at a 10V gate drive, a low gate charge of 45nC (typ), and a power dissipation capability of 68W. Its advanced design provides superior switching performance and high avalanche energy strength, making it suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FQPF9N90CT
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
CZ
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
50

EN STOCK: 3,000

Peut être expédié immédiatement

Manufacturer Stock: 4   Peut expédier 5/11/26

Commande min Quantitè: 50

Multiple: 50

DÉLAI DE L'USINE 11 Weeks Peut expédier 7/20/26  

PRICE (USD)

QTÉ
Prix unitaire
50
$1.82
100
$1.79
250
$1.76
500
$1.74
1 000
$1.71
2 500
$1.70
5 000
$1.69
7 500 +
$1.68
Emballage standard du fournisseur
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