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H11G2M by onsemi
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H11G2M

onsemi

The H11G2M is a photodarlington-type optically coupled optocoupler in a 6-pin DIP package, designed for high voltage isolation. ...

Fiche technique
RoHS Compliant
Emballage
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DESCRIPTION

The H11G2M is a photodarlington-type optocoupler that integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. This device features a high collector-emitter breakdown voltage of at least 80 V and exhibits high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1 mA. It provides high electrical isolation rated at 4,170 VACRMS for one minute and maintains low leakage current at elevated temperatures. The H11G2M is ideal for applications requiring power supply isolation, telephone ring detection, and interfacing with CMOS or low-input TTL logic.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
H11G2M
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541498000
COO:
TH
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
1000

EN STOCK: 1,550

Peut être expédié immédiatement

Commande min Quantitè: 100

DÉLAI DE L'USINE 16 Weeks

PRICE (USD)

QTÉ
Prix unitaire
100
$0.2660
500
$0.2551
1 000
$0.2545
3 000
$0.2488
5 000
$0.2459
8 000
$0.2452
15 000
$0.2431
25 000 +
$0.2417
Emballage standard du fournisseur
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