MJD44H11T4G

The MJD44H11T4G is an NPN silicon power transistor rated for 80V and 8A, designed for general purpose power and switching applications. ...

Fiche technique

Non-Compliant

Certificate of Compliance Guarantee

DESCRIPTION

The MJD44H11T4G is an NPN power transistor designed for general-purpose power and switching applications such as output or driver stages. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. This device features a low collector-emitter saturation voltage of 1.0V maximum at 8A and a minimum DC current gain (hFE) of 40 at a collector current of 4A. With a typical gain-bandwidth product of 50 MHz and fast switching speeds, it is optimized for efficient performance. Housed in a surface-mount DPAK package, the MJD44H11T4G is ideal for use in switching regulators, converters, and power amplifiers.

Product Highlights:

Potential Applications:

Search Keywords: MJD44H11T4G

SPÉCIFICATION

Product Attribute

Attribute Value

Select Attribute

Products found: 0

fournisseur:

onsemi

Référence:

MJD44H11T4G

Unité de mesure:

Per Each

RoHS:

HTS:

8541290095

COO:

ECCN:

EAR99

Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.