MJE15030G by onsemi
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MJE15030G

onsemi

The MJE15030G is an NPN complementary silicon power transistor designed for use as a high-frequency driver in audio amplifiers. ...

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DESCRIPTION

The MJE15030G is an NPN silicon power transistor designed for high-frequency driver applications, particularly in audio amplifiers. It features a collector-emitter voltage of 150 V and supports a continuous collector current of 8.0 A, with a peak current rating of 16 A. The device can dissipate up to 50 W at a case temperature of 25°C and offers a minimum current gain-bandwidth product of 30 MHz. Housed in a TO-220 package, this RoHS-compliant transistor is ideal for power amplification circuits requiring robust performance and high-frequency response.

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SPÉCIFICATION

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Produits trouvés : 0
fournisseur:
onsemi
Référence:
MJE15030G
Unité de mesure:
Par Each
RoHS:
No
HTS:
8541290095
COO:
CN
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
50
Famille:
MJE15030
Tension collecteur-base maximale:
150 V
Dimension:
10.28(Max) x 4.82(Max) x 9.28(Max) mm

EN STOCK: 3,250

Peut être expédié immédiatement

sur commande: 5 000   Peut expédier 8/17/26 

Commande min Quantitè: 50

Multiple: 50

DÉLAI DE L'USINE 26 Weeks

Prix (USD)

QTÉ
Prix unitaire
50
$0.701
250
$0.644
500
$0.642
1 000
$0.634
2 500
$0.594
5 000
$0.593
7 500
$0.580
10 000 +
$0.579

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