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MMBT3906LT1G
The MMBT3906LT1G is a general-purpose PNP silicon transistor for switching and amplification applications. ...
DESCRIPTION
The MMBT3906LT1G is a general-purpose PNP silicon transistor housed in a SOT-23 package. This device features a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Key performance characteristics include a DC current gain (hFE) between 100 and 300 at a collector current of -10 mA, and a minimum current-gain-bandwidth product of 250 MHz. The transistor has a total device dissipation of 225 mW and operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide variety of general-purpose switching and linear amplification circuits.
Mots-clés de recherche: MMBT3906LT1G
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DÉLAI DE L'USINE 42 Semaines
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