NCD57001DWR2G
onsemiIsolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation
RoHS Compliant
Certificate of Compliance Guarantee
DESCRIPTION
Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation
Search Keywords: NCD57001DWR2G
SPÉCIFICATION
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Products found: 0
fournisseur:
onsemi
Référence:
NCD57001DWR2G
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8542390070
COO:
US
ECCN:
EAR99
Référence:
1000
EN STOCK: 0
Quantité minimale de commande pour qté en rupture de stock: 250
DÉLAI DE L'USINE 25 Weeks
PRICE (USD)
QTÉ
Prix unitaire
250
$5.00
500
$3.08
750
$2.43
1 000
+
$2.39
English
French
