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NDP6060L
The NDP6060L is an N-Channel logic level enhancement mode power field effect transistor designed for low voltage applications. ...
DESCRIPTION
The NDP6060L is a logic level N-Channel enhancement mode power field effect transistor produced using a proprietary, high cell density DMOS technology. It is rated for a drain-source voltage of 60V and a continuous drain current of 48A. Key features include an extremely low on-state resistance of 0.025 Ω at VGS = 5V, a low gate threshold voltage under 2.0V for direct operation from logic drivers, and a high maximum junction temperature rating of 175°C. This device is specifically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses. It is particularly suited for automotive applications, DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching and low power loss are critical.
Mots-clés de recherche: NDP6060L
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DÉLAI DE L'USINE 18 Semaines
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