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NDS0605
The NDS0605 is a P-Channel enhancement mode field effect transistor designed for use as a voltage-controlled small signal switch. ...
DESCRIPTION
The NDS0605 is a P-Channel enhancement mode field effect transistor produced using a high cell density DMOS technology for fast switching and low on-state resistance. It features a drain-source voltage of -60V, a continuous drain current of -0.18A, and a typical on-state resistance (RDS(ON)) of 5 Ω at a gate-source voltage of -10V. The transistor operates over a wide temperature range from -55°C to +150°C and is housed in a compact SOT-23 package. This device is particularly suited for low voltage applications that require a low current, high-side switch, capable of delivering pulsed currents up to -1A.
Mots-clés de recherche: NDS0605
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DÉLAI DE L'USINE 45 Semaines
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