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NDT452AP by onsemi

NDT452AP

onsemi

The NDT452AP is a P-Channel enhancement mode power field-effect transistor rated for -30V drain-source voltage and -5A continuous drain current. ...

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DESCRIPTION

The NDT452AP is a P-Channel enhancement mode power field-effect transistor produced using a high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It features a drain-source voltage (VDSS) of -30V, a continuous drain current (ID) of -5A, and a low on-state resistance (RDS(ON)) of 0.065 Ω at a gate-source voltage of -10V. The device can handle pulsed drain currents up to -15A and operates over a wide temperature range of -65°C to 150°C. Housed in a SOT-223 surface-mount package, this transistor is particularly suited for low-voltage applications such as notebook computer power management and DC motor control.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
NDT452AP
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
4000

EN STOCK: 5,704

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Commande min Quantitè: 50

DÉLAI DE L'USINE 11 Weeks

PRICE (USD)

QTÉ
Prix unitaire
50
$0.6549
500
$0.5280
1 000
$0.4303
4 000
$0.4251
8 000
$0.4241
12 000
$0.4229
16 000
$0.4219
28 000 +
$0.4209
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