NXH004P120M3F2PTNG
onsemiSilicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
DESCRIPTION
Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
Search Keywords: NXH004P120M3F2PTNG
SPÉCIFICATION
EN STOCK: 0
Manufacturer Stock: 11 260 Peut expédier 5/15/26
Quantité minimale de commande pour qté en rupture de stock: 5
DÉLAI DE L'USINE 20 Weeks Peut expédier 9/21/26
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