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2N7002LT1G by onsemi
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2N7002LT1G

onsemi

The 2N7002LT1G is a 60V, 115mA N-Channel small signal MOSFET housed in a SOT-23 package. ...

Fiche technique
RoHS Compliant
Emballage
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DESCRIPTION

The 2N7002LT1G is an N-Channel small signal MOSFET designed for low-power applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 115mA at an ambient temperature of 25°C. Key characteristics include a maximum on-state resistance (rDS(on)) of 7.5 Ω at a 10V gate-source voltage and a gate threshold voltage range of 1.0V to 2.5V. Packaged in a Pb-Free SOT-23, this device is suitable for a variety of general-purpose switching and amplification circuits where space is a constraint.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
2N7002LT1G
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000
Maximum Continuous Drain Current:
0.115 A
Channel Type:
N
Maximum Drain Source Resistance:
7500@10V mOhm
Channel Mode:
Enhancement
Family:
2N7002L
Dimension:
2.9 x 1.3 x 0.94 mm

EN STOCK: 399,000

Peut être expédié immédiatement

Commande min Quantitè: 3000

Multiple: 3000

DÉLAI DE L'USINE 43 Weeks

PRICE (USD)

QTÉ
Prix unitaire
3 000
$0.0449
9 000
$0.0371
27 000
$0.0339
51 000
$0.0331
102 000
$0.0330
150 000
$0.0329
252 000
$0.0329
501 000 +
$0.0328
Emballage standard du fournisseur
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