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MJ21196G by onsemi

MJ21196G

onsemi

The MJ21196G is an NPN silicon power transistor designed for high-power audio output, disk head positioners, and linear applications. ...

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DESCRIPTION

The MJ21196G is an NPN silicon power transistor that utilizes Perforated Emitter technology for high-power applications. It is rated for a collector-emitter voltage of 250 V and a continuous collector current of 16 A, with a total power dissipation capacity of 250 W. This device features a high DC current gain with a minimum hFE of 25 at an 8 A collector current, ensuring excellent gain linearity and low total harmonic distortion. Due to its high Safe Operating Area (SOA) and robust design, the MJ21196G is ideal for high-fidelity audio amplifiers, disk head positioners, and other demanding linear circuits.

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fournisseur:
onsemi
Référence:
MJ21196G
Unité de mesure:
Par Each
RoHS:
No
HTS:
8541290095
COO:
MX
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
100

EN STOCK: 901

Expédition today, if you order in

sur commande: 1 400   Peut expédier 9/18/26 

Commande min Quantitè: 5

DÉLAI DE L'USINE 31 Weeks

Prix (USD)

QTÉ
Prix unitaire
5
$8.00
25
$5.04
100
$4.38
300
$4.33
500
$4.32
1 000
$4.31
2 500
$4.30
5 000 +
$4.28

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